1. The present invention relates to the field of target material processing and production, and in particular to a method for preparing a copper indium gallium selenide (CIGS) rotary sputtering target.
Background Technology:
2. CIGS thin-film solar cells boast remarkable characteristics, including low production cost, low pollution, no degradation, and excellent low-light performance. Their photoelectric conversion efficiency ranks first among all thin-film solar cells, approaching that of crystalline silicon solar cells, while costing only one-third of that. They are considered a highly promising next-generation thin-film solar cell and have been a hot topic of research and development in recent years. Furthermore, the cells feature a soft, uniform black appearance, making them ideal for applications requiring high aesthetic standards. CIGS rotary sputtering targets are a new type of sputtering target and a core component material for CIGS thin-film solar cells. They are primarily used in the preparation of the photoelectric conversion layer of CIGS thin-film solar cells using the sputtering selenization process.
3. Patent No. CN102199751b discloses a method for producing a copper indium gallium selenide target. This method involves crushing and mixing copper indium gallium selenide raw materials to produce a copper indium gallium selenide compound powder. The copper indium gallium selenide compound powder is then pressed into a blank using a molding machine. The blank is then sintered at high temperature to form a target. This process effectively shortens reaction time and improves production efficiency. However, the process uses hot pressing and sintering, which requires high-temperature equipment and results in high manufacturing costs. Due to equipment limitations, the process is not suitable for producing large-sized targets. The resulting targets are flat, resulting in low sputtering efficiency and high costs. Therefore, addressing this issue is crucial.